Semiconductor Science and Technology 32, 025014 (2017)

ISSN: 0268-1242, SCI

A theoretical study of the optical Stark effect in InGaAs/InAlAs quantum dots

Dinh Nhu Thao, Le Thi Ngoc Bao, Duong Dinh Phuoc and Nguyen Hong Quang

In this paper, we examine the three-level optical Stark effect of excitons in InGaAs/InAlAs quantum dots using renormalized wavefunction formulation. The system was assumed to be irradiated by two lasers in which a strong laser dynamically couples electron-quantized levels, while a weaker laser probes interband absorption. Our results show that, in the presence of the resonant strong laser, two new absorption peaks of excitons appear in the absorption spectrum as a clear indication of the effect. In addition, we propose that the formation of the effect in lowdimensional structures could have connection to the splitting of electron levels. Furthermore, we seek to explain the essential dependence of the amplitude and position of two peaks on pump field detuning.

URL: http://iopscience.iop.org/article/10.1088/1361-6641/32/2/025014

DOI: doi:10.1088/1361-6641/32/2/025014

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