Hoạt động
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Seminar
| Seminar Vật lý lý thuyết và Vật lý tính toán:
| | Tên báo cáo | Dynamic response of a single-electron transistor in the ac Kondo regime
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| Người trình bày | TS. Nguyễn Thị Kim Thanh
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| Cơ quan | Viện Vật lý
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| Ngày | Thứ Ba, 22-01-2013
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| Giờ | 10:00AM
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| Địa điểm | Phòng họp tầng 1, Viện Vật lý, 10 Đào Tấn, Ba Đình, Hà Nội
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| Tóm tắt | A single-electron transistor (SET) in a magnetic field irradiated with microwaves is studied theoretically in non-equilibrium Kondo regime. The two fold effect of frequency--\Omega--microwaves is considered as follows: the oscillations in the voltage with frequency \Omega and in the coupling parameters with frequency \Omega/p (p\in\mathbb{N}). We describe the system by the Kondo model at a specific point in the Toulouse limit. A non-perturbative technique is proposed, namely, the non-equilibrium Green's functions and physical observables are averaged over a period of 2\pi p/\Omega. When the microwave irradiation is considered affecting only the voltage, one sees the Kondo satellites as stated in the previous studies. Moreover, the features of the differential conductance and magnetic susceptibility of a SET become richer when the Kondo couplings are considered oscillating on time. We obtain the satellite peak splitting. It explains the possibilities one can find in experimental results that the distance between peaks, which appear in the differential conductance -- magnetic amplitude characteristics G\left(H\right) or in the differential conductance -- dc voltage characteristics G\left(V_{dc}\right), can be smaller than \hbar\Omega.
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