Hoạt động
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Seminar
| Seminar Vật lý lý thuyết và Vật lý tính toán:
| | Tên báo cáo | Nanoelectronics: When one electron is too many
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| Người trình bày | GS. Vladimir Bubanja
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| Cơ quan | Industrial Research Ltd, Lower Hutt, Wellington, New Zealand
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| Ngày | Thứ Sáu, 19-08-2011
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| Giờ | 10:00
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| Địa điểm | Phòng họp tầng 1, Viện Vật lý, 10 Đào Tấn, Ba Đình, Hà Nội
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| Tóm tắt | While current flow can usually be assumed continuous in conventional electronics, in nano-structured devices phenomena such as Coulomb blockade enable control of charge transport at the level of single electrons. I will discuss some of our recent results of the study of quantum electron transport through nanoscale conducting islands weakly coupled to the environment via tunnel junctions and capacitors. This transport strongly depends on the dimensionality of the island, as well as the nature of electron-electron and electron-phonon interactions. We consider 0D (quantum dots), 1D (carbon nanotubes), 2D (two-dimensional electron gas), and 3D islands, and analyze cases of semiconducting, metallic and superconducting islands. We take into account the details of the electromagnetic environment and derive results for the current-voltage characteristics of the above systems. These considerations are of importance for the design of the most accurate single-electron devices in metrology, for the sensor applications, and for the design of quantum information processing devices.
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