Physics Letters A 182, 125-129 (1993)

SCI

On the electron mobility in slightly compensated heavily doped GaAs at low temperatures

D. N. Quang, N. N. Dat, D. Vanan

The electron mobility at low temperatures is calculated for a slightly compensated heavily doped sample of GaAs which undergoes a thermal treatment. Account is taken of high-temperature ionic correlation and low-temperature electronic screening as well. The numerical result is found to be in very good agreement with experimental data, especially at the highest impurity concentrations.