Programme

P.69 -- Poster, VCTP-49

Date: Friday, 2 August 2024

Time: 08:30 - 10:00

Effect of frequency detuning on absorption coefficient in a semiconductor quantum well with a three-levels ladder configuration

Nguyen Tien Dung (1*), Huynh Vinh Phuc (2), Pham Tuan Vinh (2), Tran Phan Thuy Linh (3), Tran Cong Phong (4)

(1) School of Engineering and Technology, Vinh University, 182 Le Duan street, Vinh City, Nghe An province, Viet nam (2) Division of Physics, School of Education, Dong Thap University, Cao Lanh 870000, Vietnam (3) Faculty of Physics, Hanoi National University of Education, 136 Xuanthuy Road, Caugiay, Hanoi, Vietnam (4) Institute for Advanced Study in Technology, Ton Duc Thang University, No.19 Nguyen Huu Tho Street, Tan Phong Ward, District 7, Ho Chi Minh City, Vietnam

Electromagnetically induced transparency (EIT) is a quantum phenomenon, based on quantum interference, for eliminating the effect of a medium on a propagating beam of electromagnetic radiation. Almost all research on EIT has been studied extensively in atomic vapor systems but have not been studied much in low-dimensional semiconductor materials. In this paper, we study the effect of frequency detuning on absorption coefficient in a semiconductor quantum well with a three levels Ladder-configuration for studying the EIT. We use the density matrix equation for the system under the simultaneous effects of the probe and coupling lasser beams. Using approximate rotational waves and approximate electric dipoles, we obtain the analytical expressions of the absorption coefficient. The results show that in the quantum well with the Ladder-configuration, the absorption spectrum appears a transparent window for the probe laser beam called EIT window. The depth and width or the position of the EIT window can be altered by frequency detuning of the laser field. Keywords: semiconductor quantum well, absorption coefficient, electromagnetically induced transparency, frequency detuning. REFERENCES [1] S.E. Harris, J.E. Field, A. Imamoglu, Nonlinear optical processes using electromagnetically induced transparency, Phys. Rev. Lett. 64 (1990) 1107. [2] K.J. Boller, A. Imamoglu, S.E. Harris, Observation of electromagnetically induced transparency, Phys. Rev. Lett. 66 (1991) 2593. [3] J.P. Marangos, Electromagnetically induced transparency, J. Mod. Opt. 45 (1998) 471 [4] Joshi, A.; Xiao, M. Atomic optical bistability in two-and three-level systems: perspectives and prospects. J. Mod. Opt. 2010, 57, 1196–1220. [5] Taghipour, S.; Rezaei, G.; Gharaati, A. Electromagnetically induced transparency in a spherical Gaussian quantum dot. Eur. Phys. J. B 2022, 95, 141. [6] M. Fleischhauer, A. Imamoglu and J.P. Marangos, “Electromagnetically induced transparency: Optics in coherent media”, Rev. Mod. Phys., 77, 2005, pp 633-673. [7] Joseph Jayarubi etc.., “Electromagnetically induced transparency in a GaAs/InAs/GaAs quantum well in the influence of laser field intensity”, Eur. Phys. J. D, 2019, pp 73: 63 [8] Vladan Pavlovic “Electromagnetically induced transparency in a spherical quantum dot with hydrogenic impurity in a four levels ladder configuration”, Optik 127, 2016, pp 6351–6357 [9] B. Al-Nashy etc.., “Kerr nonlinearity enhancement by double tunnelling from quantum dot nanostructure”, Results in Physics 6, 2016, pp 189–193 [10] Naseri, T. Electromagnetically induced grating in semiconductor quantum dot and metal nanoparticle hybrid system by considering nonlocality effects. J. Theor. Appl. Phys. 2020, 14, 129–135. [11] A. Asgharineja etc.., “The effect of spherical metallic nanoparticles on electromagnetically induced transparency in spherical quantum dots”, Modern Physics Letters B, Vol. 30, No. 25, 2016, pp 165021. [12] Le Canh Trung, Dinh Xuan Khoa, Luu Tien Hung, Nguyen Tien Dung*, “Electromagnetic induced transparency effectcs in semiconductor quantum well with V configuration”, CASEAN-8 Proceedings 2023, 292.

Presenter: Tran Cong Phong