Programme

P.63 -- Poster, VCTP-48

Date: Thursday, 3 August 2023

Time: 08:30 - 10:00

The reconstruction of divacancies in zigzag-edge buckling silicene nanoribbons

Ngo Van Chinh (1,2), Pham Nguyen Huu Hanh (1,3), Nguyen Thi Kim Quyen (1,4), Vu Thanh Tra (5,6).

(1) School of Graduate, College of Natural Sciences, Can Tho University, 3/2 Street, Ninh Kieu District, Can Tho City, Vietnam; (2) Ho Thi Ky High School, Ca Mau, Viet Nam; (3) Thoi Thuan Middle and High School, Can Tho, Viet Nam; (4) Faculty of Engineering and Technology, Kien Giang University, Kien Giang, Viet Nam; (5) Department of Physics, School of Education, Can Tho University, Can Tho, Viet Nam; (6) College of science, department of electrophysics, National Yangming Chiaotung University, Taiwan.

In this study, we utilized the tight-binding method to study the influence of a specific type of vacancy, specifically divacancies, on the electronic structure of zigzag-edge buckling silicene nanoribbons (ZBSiNRs). We employ the tight-binding approach to construct the atomic lattice of the ZBSiNRs with divacancies and subsequently calculate their electronic structure. Our study encompasses the following key aspects: (i) construction of the model and explanation of the corresponding material structure formation, (ii) examination of the influence of divacancy positions on material properties, (iii) investigate the influence of the external electric field on each type defect material properties. The results showed that, with a two-atom vacancy, depending on the vacancies and orientations, reconstructions can form types such as d5d7(double-5 double-7 structure), 585 (pentagon-octagon-pentagon structure), (t5t7- triple-5 triple-7 structure). Futhermore, The electronic properties of these materials are strongly dependent on the magnitude of electric field. These results are important to understand more comprehensively the effects of external stimulus on the electronic properties of ZBSiNRs.  

Presenter: Pham Nguyen Huu Hanh