Programme

P.48 -- Poster, VCTP-49

Date: Friday, 2 August 2024

Time: 08:30 - 10:00

First-principles prediction of the Ohmic contact and ultralow Schottky contacts in two-dimensional metal-semiconductor van der Waals heterostructures

Chuong V. Nguyen (1), Cuong Q. Nguyen (2), Nguyen N. Hieu (2), Nguyen V. Hieu (3)

(1) Le Quy Don Technical University; (2) Duy Tan University; (3) Danang University of Education.

Electrical metal-semiconductor (M-S) contacts between metals and semiconductors are widely used in modern electronic devices. These contacts form the basis of many device architectures and are crucial for the operation of many electronic devices. At the interface of the M-S contact, an interfacial potential barrier, referred to as the Schottky barrier (SB), is typically formed. In electronic devices, a significant Schottky barrier height (SBH) can significantly hinder the charge injection efficiency. Since the SBH is closely associated with the contact resistance at the M-S contact, reducing the SBH at the M-S contact has become a significant challenge in achieving next-generation electronics technology. Therefore, it is crucial to develop effective contact engineering approaches to form either Ohmic contacts or ultralow Schottky contacts, which are highly preferred for approaching the intrinsic characteristics of 2D devices. In this work, by performing first-principles calculations we designed several M-S heterostructures between 2D metals (MoSH, Graphene) and 2D semiconductors (MoSi2N4, BSe) [1, 2]. Our findings could provide a new pathway for the design of high-performance electronic devices based on these 2D M-S heterostructures. [1] J. Phys. Chem. Lett. 13 (2022) 2576–2582 [2] Langmuir 39 (2023) 6637–6645

Presenter: Nguyễn Văn Chương