Programme

P.25 -- Poster, VCTP-47

Date: Tuesday, 2 August 2022

Time: 08:30 - 10:00

Divacancy effects on the electronic properties of zigzag buckling silicene nanoribbons

Ngo Van Chinh (1,4), Pham Nguyen Huu Hanh (2,4), Nguyen Thi Kim Quyen (3,4), Vu Thanh Tra (5)

(1) Ho Thi Ky High School, Ca Mau, Viet Nam. (2) Thoi Thuan Middle and High School, Can Tho, Viet Nam. (3) Faculty of Engineering and Technology, Kien Giang University, Kien Giang, Viet Nam. (4) School of Graduate, Can Tho University, Can Tho, Viet Nam. (5) Department of Physics, School of Education, Can Tho University, Can Tho, Viet Nam.

In this study, we used the tight-binding calculation and Green's function methodology to investigate the band structure as well as the density of states (DOS) of zigzag buckling silicene nanoribbons (ZBSiNRs) in divacancy (DV). In particularly, the number and position of vacancies are going to demonstrate in this paper. Furthermore, the external electric fields are utilized as a function of the gap size in both two cases with and without vacancies. The results illustrate that the material still exhibits the metallic nature of ZBSiNRs under the impact of divacancy. However, the flatband state has been transformed to the upward-sloping band. This is the special result in the energy bands of this material. In addition, we realized that the electronic properties of ZBSiNRs are strongly depends on the number and position of vacancies. Specially, the peak intensity at the Fermi level in DOS is strongly increasing, which leads to increment more electronic transmission channels under the presence of external electric fields. These results are important to understand more comprehensively the effects of external stimulus on the electronic properties of ZBSiNRs.

Presenter: Pham Nguyen Huu Hanh