Programme

P.6 -- Posters, VCTP-50

Date: Tuesday, 5 August 2025

Time: 08:30 - 10:00

Electromagnetically Induced Transparency in GaAs/InAs Quantum Wells under Magnetic Field and Phonon Interaction

Nguyen Tien Dung (1), Huynh Vinh Phuc (2), Pham Tuan Vinh (2), Tran Phan Thuy Linh (3), Tran Cong Phong (4)

(1) School of Engineering and Technology, Vinh University (2) Division of Physics, School of Education, Dong Thap University, (3) Faculty of Physics, Hanoi National University of Education, (4) Institute for Advanced Study in Technology, Ton Duc Thang University

We theoretically investigate the absorption properties of a ladder-type three-level system exhibiting electromagnetically induced transparency (EIT) in GaAs/InAs/GaAs semiconductor quantum wells. Using the density matrix formalism in the steady-state regime, we derive an analytical expression for the probe transition coherence under the influence of a coupling laser field, an external magnetic field, and longitudinal optical (LO) phonon interaction. The applied magnetic field induces Landau level quantization, which modifies the transition energies and shifts the EIT window. Meanwhile, the interaction between electrons and LO phonons is modeled as a temperature-dependent broadening mechanism that affects the coherence decay rates and reduces the transparency effect at higher temperatures. Numerical calculations of the probe absorption spectra reveal the interplay between magnetic-field-induced level shifts and phonon-induced spectral broadening. Our results show that the position, depth, and width of the EIT window can be effectively controlled by tuning the magnetic field strength, temperature, and coupling field intensity. This study provides useful insights into coherent light–matter interaction in low-dimensional semiconductor structures and suggests potential applications in photonic switching, optical sensing, and quantum information processing.

Presenter: Tran Cong Phong