Programme

P.25 -- Posters, VCTP-50

Date: Tuesday, 5 August 2025

Time: 08:30 - 10:00

Size and shape effects on electronic properties of CdX (X=Te, Se, and S) semiconductor nanoparticles

Le Thu Lam (1), Nguyen Trong Tam (2), Ho Khac Hieu (3,4)

(1) Faculty of Natural Sciences and Technology, Tay Bac University, Son La, Viet Nam (2) Department of Physics, Faculty of Basic–Fundamental Sciences, Viet Nam Maritime University, 484 Lach Tray, Le Chan District, Hai Phong, Viet Nam (3) Institute of Research and Development, Duy Tan University, 03 Quang Trung, Hai Chau, Da Nang 550000, Viet Nam (4) Faculty of Environmental and Natural Sciences, Duy Tan University, 03 Quang Trung, Hai Chau, Da Nang 550000, Viet Nam

In this work, we present a theoretical investigation of the size and shape effects on the band gap, conduction-band minimum, and valence-band maximum of semiconductor nanoparticles based on the bond energy model. Analytical expressions are formulated to describe these electronic properties as functions of nanoparticle size and shape. Numerical computations are performed for CdTe, CdSe, and CdS nanoparticles with sizes up to 20 nm. Theoretical results are validated through comparisons with experimental data, demonstrating strong agreement. Our findings reveal a significant widening of the band gap as particle size decreases, particularly for sizes below 5 nm. For larger nanoparticles, the band gap gradually converges toward the bulk semiconductor limit. Our findings enhance the fundamental understanding of the nanoscale electronic properties of CdX (X = Se, Te, S) semiconductor nanoparticles and offer insights into precisely tuning the band gap energy and tailoring optical properties to optimize electronic performance for specific applications.

Presenter: Ho Khac Hieu