Programme

P.73 -- Posters, VCTP-51

Date: Thursday, 6 August 2026

Time: 09:30 - 10:30

Enhanced Magneto-Optical and Transport Properties of InSb-, InAs-, and GaSb-Based Asymmetric Gaussian Quantum Wells under Confined Optical Phonons: Material-Dependent Behavior and Prospects for Infrared Photodetectors and Terahertz Optoelectronic Devices

Nguyen Dinh Hien (1), Pham Tuan Vinh (2)

(1) Laboratory of Advanced Materials Chemistry, Institute for Advanced Study in Technology, Ton Duc Thang University, Ho Chi Minh City, Vietnam; (2) Division of Physics, School of Education, Dong Thap University, Cao Lanh, Vietnam

Magneto-optical and transport properties of InSb-, InAs-, and GaSb-based asymmetric Gaussian quantum wells under confined optical phonons are investigated within the framework of optically detected magnetophonon resonance (ODMPR). Using the projection operator method, analytical expressions for the magneto-optical absorption power are derived. Particular emphasis is placed on the comparison between confined and bulk optical phonons. The results show that confined optical phonons substantially enhance the magneto-optical absorption and transport characteristics while significantly increasing the ODMPR linewidth compared with bulk optical phonons. The enhancement exhibits strong material dependence owing to differences in the effective electron mass, phonon energy, and electron–phonon coupling strength among InSb, InAs, and GaSb quantum wells. Furthermore, the ODMPR linewidth provides valuable insight into the intensity of electron-phonon interactions, electron relaxation dynamics, and phonon-mediated scattering processes in these low-dimensional systems. The present findings demonstrate the important role of phonon confinement in tailoring the magneto-optical response of semiconductor quantum wells and suggest promising prospects for experimental and application studies of infrared photodetectors and terahertz optoelectronic devices.

Presenter: Nguyen Dinh Hien