Programme

P.16 -- Posters, VCTP-51

Date: Tuesday, 4 August 2026

Time: 09:30 - 10:30

Material-Dependent Hot-Electron Energy Dissipation in GaAs-, GaSb-, and InAs-Based Asymmetric Gaussian Quantum Wells: Implications for Infrared and Terahertz Optoelectronics

Nguyen Dinh Hien (1), Pham Tuan Vinh (2)

(1) Laboratory of Advanced Materials Chemistry, Institute for Advanced Study in Technology, Ton Duc Thang University, Ho Chi Minh City, Vietnam; (2) Division of Physics, School of Education, Dong Thap University, Cao Lanh, Vietnam

Material-dependent hot-electron energy dissipation in GaAs-, GaSb-, and InAs-based asymmetric Gaussian quantum wells is investigated through the hot-electron energy-loss rate (ELR), with particular asymmetric Gaussian confinement, which more closely represents practical quantum-well structures than idealized square-well models. The ELR is calculated within the electron temperature model by considering electron–LO phonon interaction under a quantizing magnetic field, while the effects of electron temperature, electric field, quantum-well depth, and quantum-well width are systematically examined. The results demonstrate that the ELR can be effectively controlled and tuned by adjusting the quantizing magnetic field, electron temperature, electric field, quantum-well depth, and quantum-well width, highlighting the high tunability of hot-electron energy dissipation in asymmetric Gaussian quantum wells. Distinct material-dependent ELR behaviors are observed among the GaAs-, GaSb-, and InAs-based structures owing to differences in their electronic properties, phonon characteristics, and electron–phonon interaction strengths. These findings provide valuable physical insight into carrier energy relaxation in low-dimensional semiconductor systems and have important implications for the design of infrared and terahertz optoelectronic devices based on quantum-confined nanostructures.

Presenter: Pham Tuan Vinh