Programme

P.60 -- Poster, VCTP-48

Date: Thursday, 3 August 2023

Time: 08:30 - 10:00

Unlocking the Potential of GeS Monolayer: Strain-Enabled Control of Electronic Transports and Exciton Radiative Lifetimes

Vo Khuong Dien1, Pham Thi Bich Thao2, Nguyen Thi Han1, Nguyen Duy Khanh3, Le Vo Phuong Thuan1, Ming-Fa Lin1,4, and Nguyen Thanh Tien2

1 Department of Physics, National Cheng Kung University, 701 Tainan, Taiwan. 2 College of Natural Sciences, Can Tho University, 3-2 Road, Can Tho City 94000, Vietnam. 3 High-Performance Computing Laboratory (HPC Lab), Thu Dau Mot University, 75100, Binh Duong, Vietnam. 4 Hierarchical Green-Energy Material (Hi-GEM) Research Center, National Cheng Kung University, 701 Tainan, Taiwan.

Monolayer Germanium sulfide (GeS) is gaining significant attention for its exceptional anisotropic electronic conductance, notable excitonic effects, and wide range of potential applications. In our study, we used density functional theory (DFT), many-body perturbation theory (MBPT), and non-equilibrium Green's Function (NEGF) to investigate electronic transport properties and exciton radiative lifetime of single-layer GeS. Our theoretical findings showed that applying up to 8% compressive strain increased carrier mobility by nearly threefold, and thus, dramatically enhance the device’s current intensity. Moreover, we observed that strain engineering allowed fine-tuning of the electron-hole recombination time. At 6% tensile strain, the effective radiative lifetime was as short as 19 picoseconds, which is 4.5 times faster than the intrinsic state and 80 times faster than at 8% compressive strain. These results highlight the potential of strain engineering to customize the electronic and optical properties of GeS monolayer for specific electronic, optoelectronic, and photovoltaic device requirements.

Presenter: Vo Khuong Dien