Programme

P.43 -- Poster, VCTP-48

Date: Thursday, 3 August 2023

Time: 08:30 - 10:00

Dual-channel Optical bistability in a four-level atomic system with a static magnetic field

Le Van Doai, Luong Thi Yen Nga and Ho Hai Quang

Vinh University, 182 Le Duan Street, Vinh City, Vietnam.

Dual-channel Optical bistability in a four-level atomic system with a static magnetic field Le Van Doai, Luong Thi Yen Nga and Ho Hai Quang Vinh University, 182 Le Duan Street, Vinh City, Vietnam. Email: doailv@vinhuni.edu.vn Abstract: As we known that optical bistability (OB) is essential element in photonic devices such as optical transistors, optical memories, optical logic gates and optical switches, and so on [1]. Response speed and the sensitivity of the optical devices depend on the threshold intensity and width of the OB. Therefore, one is always looking for solutions to change the threshold intensity and the width of the OB, so that the operating characteristics of optical devices can be controlled. In recent years, the discovery of electromagnetically induced transparency (EIT) [2] has provided a simple solution to control both the threshold intensity and width of the OB can be easily controlled and reduced significantly [3]. Initially, theoretical and experimental studies on the OB focused on three-level atomic systems including three-level -, V- and ladder-type configurations [4-8]. It is found that, the threshold intensity and width of the OB system are controlled by the intensity and frequency of laser fields. Recently, Recently, many studies have been done to investigate optical bistability in four- and five-level atomic systems [9-11]. In this paper, we study the formation of a two-channel OB effect in a four-level atomic system in the presence of an external magnetic field. The OB effect is controlled according to the laser parameters and the external magnetic field. References [1] E. Abraham and S. D. Smith, Rep. Prog. Phys. 45 (1982) 815-885. [2] K.J. Boller, A. Imamoglu, and S.E. Harris, Phys. Rev. Lett. 66 (1991) 2593. [3] N. H. Bang, L. V. Doai and D. X. Khoa, Comm. Phys. 28 (2019) 1-33. [4] S.Q. Gong, S.D. Du, Z.Z. Xu, and S.H. Pan, Phys. Lett. A 222 (1996) 237–240. [5] H. Wang, D. J. Goorskey, and M. Xiao, Phys. Rev. A 65 (2001) 011801R. [6] A. Joshi, A. Brown, H. Wang, and M. Xiao, Phys. Rev. A 67 (2003) 041801(R). [7] J. Li, Physica D 228 (2007) 148. [8] Z. Wang, A-X. Chen, Y. Bai, W.-X. Yang, and R.-K. Lee, J. Opt. Soc. Am. B 29 (2012) 2891-2896. [9] H. R. Hamedi, S. H. Asadpour, M. Sahrai, B. Arzhang, D. Taherkhani, Opt. Quant. Electron. 45 (2013) 295–306. [10] L. Ebrahimi Zohravi, R. Doostkam, S. M. Mousavi, and M. Mahmoudi, Progr. Electrom. Re. M 25 (2012) 1-11. [11] D. X. Khoa, L. V. Doai, L. N. M. Anh, L. C. Trung, P. V. Thuan, N. T. Dung, and N. H. Bang, J. Opt. Soc. Am. B 33 (2016) 735-740.

Presenter: Luong Thi Yen Nga