Programme

P.2 -- Poster, VCTP-48

Date: Tuesday, 1 August 2023

Time: 08:30 - 10:00

Effects of vacancy on the electronic properties of zigzag buckling silicene nanoribbons

Ngo Van Chinh (1,2), Pham Nguyen Huu Hanh (1,3), Nguyen Thi Kim Quyen (1,4), Vu Thanh Tra (5,6)

(1) School of Graduate, College of Natural Sciences, Can Tho University, 3/2 Street, Ninh Kieu District, Can Tho City, Vietnam; (2) Ho Thi Ky High School, Ca Mau, Viet Nam; (3) Thoi Thuan Middle and High School, Can Tho, Viet Nam; (4) Faculty of Engineering and Technology, Kien Giang University, Kien Giang, Viet Nam; (5) Department of Physics, School of Education, Can Tho University, Can Tho, Viet Nam; (6) College of science, department of electrophysics, National Yangming Chiaotung University, Taiwan.

In this work, we aim to investigate the electronic structure of buckling silicene nanoribbons (BSiNRs) under the simultaneous effects of vacancies and external fields by using Tight Binding (TB) calculations. The variation of the electronic properties due to the number and the position of vacancies is investigated extensively. Furthermore, we are particularly interested in the correlation of the energy band structure and reconstruction of each defect type. The results showed that, for single vacancy, structure 5-9 is the most feasible, while for di-vacancy, structure 5-8-5 is the most stable. On the other hand, under the impact of external electric fields, the bandgap and the band shape are strongly modulated. This confirms the energy gap strongly depends on the magnitude of electric field. This study thus unveils some important conditions for controlling the gap as well as the electronic properties of BSiNRs.

Presenter: Ngo Van Chinh