Programme

P.11 -- Poster, VCTP-48

Date: Tuesday, 1 August 2023

Time: 08:30 - 10:00

Conductivity near the metal-insulator transitions in the disordered Hubbard model at half-filling

Hoang Anh Tuan (1), Nguyen Thi Hai Yen (1) and Le Duc Anh (2)

(1) Institute of Physics, VAST (2) Hanoi National University of Education

In this work, the dc conductivity for half-filled disordered Hubbard model near the Mott- and Anderson metal-insulator transitions is calculated within the typical medium theory. The influence of random potential, on-site Coulomb interaction and temperature on the dc conductivity in the model is investigated. The difference in the conductivity near the Mott- and Anderson metal-insulator transitions is shown and discussed.

Presenter: Hoang Anh-Tuan