Program

P.24 -- Poster, NCTP-40

Date: Monday, 27 July 2015

Time: 14h00 - 15h30

Mott transitions in the ionic Hubbard model on a honeycomb lattice

N. T. Hương, L. Đ. Ánh, N. T. H. Yến, H. A. Tuấn

Institute of Physics

We study a two-dimensional ionic Hubbard model on a honeycomb lattice as a simple basis for describing the electronic structure of silicone in the presence of an electric field induced by the substrate. The local lattice Green function of the model is obtained within the coherent potential approximation. Two transitions from the band insulator via a metallic state to a Mott insulator are found with increasing U. The values of the critical correlation-driven metal–insulator transitions are estimated. Results of the calculated charge density wave and double occupation reveal the nature of the two transitions .

Presenter: Nguyễn Thị Hương