Program

O.18 -- Oral, NCTP-40

Date: Wednesday, 29 July 2015

Time: 14h40 - 15h00

Electron mobility in MgZnO/ZnO heterojunctions: Effect of phonon scattering in wurtzite structures.

Vo Van Tai (1), Nguyen Quoc Khanh (2)

(1) College of Technology and Industrial Management (CTIM). (2) University of Science Ho Chi Minh City.

Mobility of a two-dimensional electron gas at MgZnO/ZnO heterojunctions for temperatures T<300(K) is studied in detail. The electrons, assumed to be confined to the lowest subband, are considered to be scattered by interface charges, interface roughness, background impurities, acoustic phonons via deformation potential and piezoelectric fields, and polar LO phonons. Our work encompasses three physically distinct temperature ranges with respect to phonon scattering: the Block-Gruneissen (BG), equipartition (EP), and inelastic regimes. We carry out calculations in the BG regime and compare the results with corresponding ones in the EP regime. We also compute the first order perturbation distribution by directly solving the linearized Boltzmann equation by an iterative method, and compare with the low-temperature relaxation-time approximation and the high-energy relaxation-time approximation. Good agreement with recent low temperature mobility data is obtained.

Presenter: Võ Văn Tài