Program

P.18 -- Poster, NCTP-40

Date: Monday, 27 July 2015

Time: 14h00 - 15h30

Influence of phonon confinement on the optically detected electrophonon resonance line-width in quantum wells.

Nguyen Dinh Hien (1), Le Dinh (1), Vo Thanh Lam (2), Tran Cong Phong (3)

(1) Hue University’s College of Education, 34 Le Loi Str., Hue City, Viet Nam. (2) Department of Physics, Sai Gon University, 273 An Duong Vuong Str., District 5, Ho Chi Minh City, Viet Nam. (3) Vietnam Institute of Educational Sciences, 101 Tran Hung DaoStr., District Hoan Kiem, Ha Noi, Viet Nam.

We investigate the effect of phonon confinement on the optically-detected electrophonon resonance (ODEPR) effect and ODEPR line-width in GaAs quantum wells. The ODEPR conditions as functions of the well’swidth and the photon energy are also obtained. The shifts of ODEPR peaks caused by the confined phonon are discussed. The numerical result for the specific GaAs quantum well shows that in the two cases of confined and bulk phonons, the line-width (LW) decreases with increasing well's width and increases with increasing temperature. Furthermore, in the small range of the well's widththe influence of phonon confinement plays an important role and cannot be neglected in reaching the ODEPR line-width.

Presenter: Nguyen Dinh Hien