Programme

O.5 -- Oral, NCTP-39

Date: Monday, 28-07-2014

Time: 14h40 - 15h00

Temperature-Dependent Transport in locally gated graphene bipolar junctions

T.Hoc Bui (1), D.Quang To (2)

(1) VNU University of Science, faculty of Physics, 334 Nguyen Trai, Thanh Xuan, Ha Noi, Viet Nam; (2) Center for Computational Physics, Institute of Physics, VAST, Ha Noi, Viet Nam

We study the temperature-dependent transport in locally gated graphene bipolar junctions using model of Gaussian-type potential was suggested by Nhung T T Nguyen et al 2014 J. Phys.: Condens. Matter 26 015301 . Using this model we study the resistance, current-voltage characteristics, and shot noise for locally gated graphene bipolar junction under varying temperature. Our results describe well experimental data obtained by Jairo Velasco Jr et al 2009 New J. Phys. 11 095008.

Presenter: Bùi Thái Học