Computational Electronics (IWCE), 2015 International Workshop on, p. 1-3 (2015)

Strong negative differential resistance in graphene devices with local strain

M. Chung Nguyen, Viet-Hung Nguyen,Jérôme Saint-Martin, Philippe Dollfu, Huy-Viet Nguyen

The effects of local uniaxial strain on grapshene devices like single-barrier structure and p-n tunnel diode are investigated. The strain-induced displacement of Dirac points allows us toi suppress and/or control the Klein tunneling and the interband tunneling, which leads to strong effect of negative differential conductance. It is shown that when strain is suitably applied, the peak-to-valley ratio of the current-voltage characteristics can reach of a few hundred at room temperature.

DOI: 10.1109/IWCE.2015.7301954

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