APPLIED PHYSICS LETTERS 106, 023508 (2015)

ISSN: 0003-6951, SCI

Remote surface roughness scattering in fully depleted silicon-on-insulator devices with high-j/SiO2 gate stacks

Y. M. Niquet, I. Duchemin, V.-H. Nguyen, F. Triozon, and D. Rideau

We investigate remote surface roughness (RSR) scattering by the SiO2/HfO2 interface in Fully Depleted Silicon-on-Insulator devices using Non-Equilibrium Green’s Functions. We show that the RSR mobility is controlled by cross-correlations between the surface roughness profiles at the Si/ SiO2 and SiO2/HfO2 interfaces. Therefore, surface roughness and remote surface roughness cannot be modeled as two independent mechanisms. RSR tends to enhance the total mobility when the Si/ SiO2 interface and SiO2 thickness profiles are correlated, and to decrease the total mobility when they are anti-correlated. We discuss the implications for the high-j/Metal gate technologies

URL: http://dx.doi.org/10.1063/1.4906199

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