Programme

P.56 -- Poster, VCTP-45

Date: Tuesday, 13 October 2020

Time: 08:30 - 10:00

The effect of vacancies on the electronic properties of bilayer graphene nanoribbons

Nguyen Thi Kim Quyen (1,2), Vu Thanh Tra (3) and Tran Van Truong (4)

(1) School of Graduate, Can Tho University, Can Tho, Vietnam (2) Faculty of Engineering and Technology, Kien Giang University, Kien Giang, Vietnam (3) Department of Physics, School of Education, Can Tho University, Can Tho, Vietnam (4) IMPMC, Université Pierre et Marie Curie (UPMC), Sorbonne Universités, CNRS UMR 7590, IRD UMR 206, Case 115, 4 place Jussieu, 75252 Paris Cedex 05, France

Bilayer graphene nanoribbons (BGNRs) are intriguing candidates for semiconducting materials system because of their ability in modulation of the band gap under external excitations. In this study, we applied the Tight Binding (TB) method in combination with Green’s function formalism to investigate the energy band and the density of states (DOS) of the studied structures. The difference between perfect and defected bilayer armchair graphene nanoribbons (BAGNRs) in the presence of external electric fields is presented. The results reveal that the electronic structure of BAGNRs strongly depends on the position as well as the density of vacancies. The defects are found to strongly impact the energy levels compared to that in the perfect structure. Besides, the effects of the external electric fields and defects are demonstrated in controlling the band gap.

Presenter: Nguyen Thi Kim Quyen

Presentation file: