Programme

P.45 -- Poster, VCTP-45

Date: Tuesday, 13 October 2020

Time: 08:30 - 10:00

Optimizing of InGaAsSb/GaSb Layer for Infrared Optoelectronics Devices

Nguyen Tien Dai (1,2,*), Man Minh Tan (1,2), Dang Van Thai (1,2), Truong Thi Hien (1,2), Le Anh Thi (3), Kim Jun Oh (4), Lee Sang Jun (4), and Dang Tran Chien (5)

(1) Institute of Theoretical and Applied Research, Duy Tan University, Hanoi, 100000, Vietnam; (2) Faculty of Natural Sciences, Duy Tan University, Da Nang, 550000, Vietnam; (3) Institute of Research and Development, Duy Tan University, Da Nang, 550000, Vietnam; (4) Korea Research Institute of Standard and Science, Daejeon, 34134, South Korea; (5) Hanoi University of Natural Resources & Environment, 41A Phu Dien road, North Tu Liem district, Hanoi, Vietnam

We report the synthesis of $In_{x}Ga_{1-x}As_{y}Sb_{1-y}$epi-layer on the GaSb (100) substrate by calculated theoretical and molecular beam epitaxy (MBE) growth. The result showed that the InGaAsSb lattice matching layer is suitable for our calculation and experimental. The layers with a y = 0.91$\times x$ [1] lattice matching condition might vary In concentration from 0-1 to obtains high device performance in the infrared (IR) range from 1.7 to 3.2 $\mu m$ at 300 K, respectively. As a result, we used a theoretical model $(y =\frac {As_{ Flux}} {(As_{Flux} + Sb_{ Flux })})$ [2], and the MBE growth to optimize $In_{0.23}Ga_{0.77}As_{0.22}Sb_{0.78}/GaSb$ epi-layer for photodetector. This layer can absorb IR wavelength at 2.6 $\mu m$, 300 K that will be applied for detecting $CO_{2}$ gas and moisture further.

Presenter: Nguyen Tien Dai