Programme

P.4 -- Poster, VCTP-45

Date: Tuesday, 13 October 2020

Time: 08:30 - 10:00

Interfacial characteristics, Schottky contact and optical performance of Graphene/Ga2SSe van der Waals heterostructure: Strain engineering and electric field tunable

Le M. Duc (1), Vo T. T. Vi (2), Nguyen V. Hieu (3), Nguyen N. Hieu (4), Chuong V. Nguyen (1)

(1) Le Quy Don Technical University, Hanoi, Vietnam (2) Hue University of Education, Hue, Vietnam (3) University of Education, The University of Da Nang, Da Nang, Vietnam (4) Duy Tan University, Danang, Vietnam

Two-dimensional graphene-based van der Waals heterostructures have received considerable interests because of their intriguing characteristics as compared with the constituent single-layered two-dimensional materials. Here, we investigate the interfacial characteristics, Schottky contact and optical performance of Graphene/Ga2SSe van der Waals heterostructure using first principles calculations. The effects of stacking patterns, electric gating and interlayer coupling on the interfacial properties of graphene/Ga2SSe heterostructures are also examined. Our results demonstrate that the Dirac cone of graphene is well preserved at the $\Gamma$ point in all stacking patterns due to the weak vdW interactions, which keep the heterostructures feasible such that they can be obtained in further experiments. Moreover, depending on the stacking patterns, a small band gap of about (13 - 17)~meV opens in graphene and has a high carrier mobility, indicating that the graphene/Ga2SSe heterostructures are potential candidates for future high-speed nanoelectronic applications. In the ground state, the graphene/Ga2SSe heterostructures form an n-type Schottky contact. The transformation from n-type to p-type Schottky contact or to Ohmic contact can be forced by eletric gating or by varying the interlayer coupling. Our findings could provide physical guidance for designing controllable Schottky nanodevices with high electronic and optical performances.

Presenter: Nguyen V. Chuong

Presentation file: