Programme

P.27 -- Poster, VCTP-45

Date: Tuesday, 13 October 2020

Time: 08:30 - 10:00

Effect of electric fields on the electronic structures of zigzag buckling silicene nanoribbons

Pham Nguyen Huu Hanh (1) , Vu Thanh Tra (2)

(1) School of Graduate, College of Natural Sciences, Can Tho University, Can Tho, Vietnam (2) Department of Physics, School of Education, Can Tho University, Can Tho, Vietnam

In this study, we used the tight-binding model to investigate the band structure as well as the density of state (DOS) of zigzag buckling silicene nanoribbons (ZBSiNRs). In addition, external electric fields are also added into the Hamiltonian to investigate the effect of transverse and vertical electric fields on the electronic properties of ZBSiNRs. First, we noticed that ZBSiNRs have a small bandgap and it depends on the buckling distance. Second, by comparing the effects of the two electric fields, we showed that the vertical field opens the bandgap more significantly than the transverse one. The band gap opening is proportional to the strength of the vertical potential. Unlike the vertical electric field, the gap within the transverse field decreases if the strength of the field reaches a critical value. Within the vertical fields, ZBSiNRs are found to be are impacted more strongly than zigzag flat silicene nanoribbons (ZFSiNRs) and zigzag graphene nanoribbons (ZGNRs). In particular, when we investigated both fields simultaneously, we found that they have a mutual impact on the gap of ZBSiNRs. These results are important to understand more comprehensively the effects of electric fields on ZBSiNRs. Corresponding author: vttra@ctu.edu.vn

Presenter: Pham Nguyen Huu Hanh

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