Programme

P.9 -- Poster, VCTP-44

Date: Tuesday, 30 July 2019

Time: 08:30 - 10:00

Strain and electric field tunable electronic properties and Schottky barrier of Graphene/GaX (X = S, Se) heterostructures

Chuong V. Nguyen (1), Bin Amin (2), Nguyen N. Hieu (3), Le T. P. Thao (4)

(1) Le Quy Don Technical University, Ha Noi, Viet Nam (2) Abbottabad University of Science and Technology, Abbottabad, Pakistan (3) Duy Tan University, Da Nang, Viet Nam (4) University of Education, The University of Da Nang, Da Nang, Viet Nam

Graphene-based two-dimensional materials are recently attracting significant attention because they can preserve novel characteristics of Dirac cone. Here, based on first-principles calculations, we investigate the electronic characteristics of Graphene/GaX (X = S, Se) van der Waals heterostructures (vdWHs). Our results show that the intrinsic electronic properties of both the graphene and GaX monolayer are preserved well in the Graphene/GaX (X = S, Se) vdWHs, and n-type Schottky contacts with a small Schottky barrier height (SBH) are formed at their interfaces. More interestingly, varying the interlayer distance or applying an external electric field can effectively modulate the Schottky barrier and the Schottky contact (n-type and p-type) of the Graphene/GaX vdWHs [1, 2]. Our findings provide insights into the fundamental properties and open up the possibility of vdWHs for designing high-performance optoelectronic nanodevices. References [1] Khang D. Pham, Nguyen N. Hieu, Huynh V. Phuc, A. Fedorov, A. Duque, Bin Amin, Chuong V. Nguyen, Applied Physics Letters, 113 (2018) 171605. [2] H. Phuc, V. Ilyasov, N. Hieu, Bin Amin, Chuong V. Nguyen, Journal of Alloys and Compounds, 750 (2018) 765-773.

Presenter: Nguyen Van Chuong