Programme

P.81 -- Poster, VCTP-44

Date: Thursday, 1 August 2019

Time: 08:30 - 10:00

The quantum Ettingshausen effect in parabolic quantum well with in-plane magnetic field in the presence of laser radiation under the influence of confined optical phonon

Nguyen Thi Lam Quynh (1), Nguyen Thu Huong (2), Nguyen Ba Duc (3), Nguyen Quang Bau (1)

(1) Hanoi University of Science; (2) Air Defence – Air Force Academy; (3) Tan Trao University

The quantum Etttingshausen effect in a parabolic quantum well subjected to a constant electric field, magnetic field in the presence of laser radiation is studied by using the quantum kinetic equation method. The analytic expressions for conductivity tensors and dynamic tensors as well as the Ettingshausen coefficient (EC) are obtained in the case of the confined electron-confined optical phonon (COP) scattering. The EC depends on specific quantities for external field (such as magnetic field, amplitude and frequency of laser radiation), temperature of the system and quantum well length, especially quantum number m- characterizing the confinement of optical phonon (OP). When m is set to zero, we get the results corresponding to the case of unconfined OP. The analytic results are numerically evaluated and graphed for GaAs/AlGaAs parabolic quantum well. When examining the effect of temperature, the EC has greater values due to the COP. Meanwhile, when quantum well length and amplitude of the laser radiation (LR) increase, the EC has greater values without the confinement of OP. Because of the approach of system to bulk semiconductor structure when the quantum well length approaches micrometer-size, the EC reaches constant. The quantum number m leads to the change of resonance peaks position within the change of the magnetic field. In addition, the EC exerts non-linear dependence on the amplitude and frequency of the LE. All results indicated that the COP not only affects qualitatively but also affects the transformation rules of the EC. It provides new insights and contributes to the orientation of research into quantum effects in low-dimensional semiconductor systems (LDS).

Presenter: Nguyễn Thị Lâm Quỳnh