Programme

P.65 -- Poster, VCTP-44

Date: Thursday, 1 August 2019

Time: 08:30 - 10:00

Temperature-dependent transport properties of two-dimensional hole gas in Ge channel modulation-doped square quantum wells

Tran Thi Hai, Ho Khac Hieu, Le Ba Nam, Trinh Thi Dung

Hong Duc University

We have studied the mobility of a two-dimensional hole gas at high temperature in Ge channel modulation-doped square quantum wells. Within the variational approach, we obtain analytic expressions for the carrier distribution, and autocorrelation functions for various scattering mechanisms. Calculated temperature-dependent hole mobilities of quantum wells with different scattering mechanisms, e.g.ocoustic and optical phonon scattering. Our calculation show that the dependence of the mobilities of carriers on the temperature in the square quantum wells.

Presenter: Tran Thi Hai