Programme

P.55 -- Poster, VCTP-44

Date: Thursday, 1 August 2019

Time: 08:30 - 10:00

Electronic structures in armchair silicene nanoribbons

Danh Tan Xuan (1,2), Nguyen Thi Kim Quyen (3), Thai Thanh Lap (4), Vu Thanh Tra (4)

(1) School of Graduate, Can Tho University, Can Tho, Vietnam; (2) Thot Not HighSchool, Can Tho, Vietnam; (3) Faculty of Engineering and Technology, Kien Giang University, Kien Giang, Vietnam; (4) Department of Physics, School of Education, Cantho University.

Nowadays, two dimensional material is the best candidate for the future electronic devices. Armchair silicene nanoribbons is not an exception when its outstanding properties can be comparable with the traditional electronic devices base on silicon. In this paper, we use atomistic Tight binding method and Green 's function formalism to calculate the band structure as well as the density of state (DOS) and the tranmission (T) of this material. The results illustrated that the structure of armchair silicene nanoribbons is the similar to graphene, this means the armchair silicene nanoribbons allways exhibits three groups such as 3p, 3p+1 and 3p+2. However, the natural highest band gap in this material is about 1.4eV, which is smaller than the one in graphene. For this reason, a tunable bandgap would be highly desirable. Consequently, we continue the application of the transverse electric filed to conctrol the energy gap. Our results show that the band gap strongly depends on and modulates as a function of electric field and the width of nanoribbons. With results received, we believe that our study strongly supports write up the picture of the electronic structure and its properties of armchair silicene nanoribbons. Keywords: nanoribbons, band structures, band gap, transverse electric…

Presenter: Danh Tan Xuan