Programme

P.54 -- Poster, VCTP-44

Date: Thursday, 1 August 2019

Time: 08:30 - 10:00

The effect of external electric fields on the electronic band structure of AA-stacking bilayer graphene ribbons

Nguyen Lam Thuy Duong (1), Dao Thuy Tuong Vi (1), Vu Thanh Tra (2), Tran Van Truong (3)

(1) School of Graduate, Can Tho University, Can Tho, Vietnam; (2) Department of Physics, School of Education, Can Tho University, Can Tho, Viet Nam; (3) SRMP, CEA Saclay, Université Paris-Saclay, F-91191, Gif-sur-Yvette, France

Graphene, an isolated single layer of carbon atoms, has attracted huge attention of many scientists due to its unique and intriguing electronic characteristics. Recently, attention has been paid to bilayer structures of graphene where numerous novel phenomena have been observed in the presence of external fields or stacking faults. Although the AB stacking structures have been studied extensively, less attention has been paid to AA-stacking, particularly to bilayers of ribbon structures. In this work, we examine the band structure of AA-stacking bilayer graphene ribbons using a tight binding model. Both armchair and zigzag edge structures are considered. External electric fields are also added into the Hamiltonian. We noticed that the effect of transverse and vertical electric fields is remarkable with some noticeable distinction which is reflected in the change of both the energy bands and the density of states. The electronic properties of these AA-stacking structures, with and without external fields, are also compared to the ones of the AB-stacking systems, providing a more comprehensive understanding of the stacking dependence of the electronic structures in bilayer ribbon structures of graphene.

Presenter: Dao Thuy Tuong Vi