Programme

O.22 -- Oral, VCTP-44

Date: Thursday, 1 August 2019

Time: 16:50 - 17:10

Spin-dependent tunneling and spin current in semiconductor heterostructures

Hoai T. L. Nguyen (1), Loan T. Nguyen (2,3), Quang D. To (4), Huong T. Dang (5), H. Jaffrès (5) and H.-J. Drouhin (4)

(1) Institute of Physics, VAST, 10 Daotan, Badinh, Hanoi, Vietnam (2) Graduate University of Science and Technology, VAST, 18 Hoang Quoc Viet road, Hanoi, Vietnam (3) Hong Duc University, 307 Le Lai, Dong Son, Thanh Hoa city, Vietnam (4) Laboratoire des Solides Irradiés, École Polytechnique, CNRS, CEA/DRF/IRAMIS, Institute Polytechnique de Paris, 91128 Palaiseau, France (5) Unité Mixte de Physique, CNRS, Thales, Univ. Paris-Sud, Univ. Paris-Saclay, , 91767 Palaiseau , France

We present our recent research concerning anomalous spin-dependent tunneling of electron and holes through semiconductor heterostructures involving both spin-orbit and exchange interactions. We carefully introduce the concept of spin current and derive its analytical expression in the simplest cases where only conduction or valence bands are involved. Numerical calculations have been performed, base on multi-band k.p approaches and scattering matrix descriptions, step by step incorporating the higher-order bands of the material band-structure. As an illustration, we show the spin-current profiles through a GaMnAs/GaAs/GaMnAs heterostructure in three specific magnetization configurations.

Presenter: Nguyen Thi Loan