Programme

P.20 -- Poster, VCTP-44

Date: Tuesday, 30 July 2019

Time: 08:30 - 10:00

Mechanisms of nonsequential double ionization process of argon by near-single cycle laser pulse

Truong Thu D. H. (1), Duc Anh Dinh (2), T. V. N. Hao (3), Vinh N. T. Pham (1)

(1) Ho Chi Minh City University of Education, Ho Chi Minh City 748342, Vietnam; (2) NTT Hi-Tech Institute, Nguyen Tat Thanh University, Ho Chi Minh City 700000, Vietnam; Faculty of Physics, University of Education, Hue University, 34 Le Loi Street, Hue City, Vietnam

In this study, the near-single cycle laser pulse is used to trigger the nonsequential double ionization process of argon atom for decontaminating the secondary recollision processes. The mechanisms and distributions of recollision-ionization channels to the nonsequential double ionization process are comprehensively investigated. Two representative intensities of the laser field are considered for illustrating the nonsequential double ionization process in cases of below and above the recollision-ionization threshold of argon. The results indicate that recollision-induced excitation with subsequent ionization and direct ionization mechanisms are dominant for low and high intensities of laser field, respectively.

Presenter: Truong Dang Hoai Thu