Program

P.73 -- Poster, NCTP-42

Date: Wednesday, 2 August 2017

Time: 08h30 - 10h00

Controlling Band Gap of MoS2 Monolayer by Applying Pressure

Ong Kim Le (1,2), Do Ngoc Son (1,*)

(1) University of Technology, VNU-HCM, Ho Chi Minh City, Vietnam; (2) Department of Physics, Faculty of Science, Can Tho University, Can Tho City, Vietnam; *Email: dnson@hcmut.edu.vn

The MoS2 monolayer is a typical two-dimensional semiconductor of transition metal dichalcogenides, which have been attracting a great attention due to their promising potential for applications in nanotechnology. The existence of a band gap in the MoS2 monolayer is fascinating for applications in transistors fabrication. A control of the band gap of the MoS2 monolayer is a necessary engineering for developing nanoelectronics devices. Therefore, we studied the influence of pressure on MoS2 monolayer by using the density functional theory calculations. We analyzed the band structure and the electronic density of state of MoS2 before and after applying the pressure. We found that the width of the band gap of MoS2 monolayer strongly depends on pressure.

Presenter: Ong Kim Le