Program

P.63 -- Poster, NCTP-42

Date: Wednesday, 2 August 2017

Time: 08h30 - 10h00

Dependence of Short-Channel Effects on Semiconductor Bandgap in Tunnel Field-Effect Transistors

Nguyen Dang Chien (1), Chun-Hsing Shih (2)

(1) Dalat University; (2) National Chi Nan University

Using low-bandgap materials is considered as an effective method to enhance the performance of tunnel field-effect transistors (TFETs). Based on two-dimensional simulations, the dependence of short-channel effects on the semiconductor bandgap in TFETs is examined in this study. Even though the supply voltage is decreased in parallel with the bandgap, simulation results show that the short channel effect is more severe with using lower bandgap semiconductors. For a given bandgap material, the short-channel effect can be well evaluated by the variation of drain-induced barrier thinning (DIBT) with decreasing the channel length. For TFETs using different bandgap materials, however, their short-channel effects cannot be compared properly by comparing the DIBTs. Adequately considering the effect of bandgap on the short-channel performance of TFETs is important in designing extremely scaled integrated circuits.

Presenter: Nguyễn Đăng Chiến