Program

P.31 -- Poster, NCTP-42

Date: Tuesday, 1 August 2017

Time: 16h00 - 17h30

Anomalous Velocity by Berry Curvature Effect in Semiconductor GaAs Quantum Well

Ngô Thành Công (1,2), Huỳnh Thanh Đức (1)

(1) Ho Chi Minh City Institute of Physics (2) Ho Chi Minh City University of Science

The anomalous movement of charge carriers in solids subjected to an electric driving field is one of the most intriguing properties. Their velocity has a perpendicular component to the electric field, even without any magnetic field. There are two types contributing to anomalous velocity: intrinsic effect linked to Berry curvature, and extrinsic effect due to scattering processes, known as skew scattering and side jump. In this work, we focus on studying the intrinsic effect caused by Berry curvature. Firstly, using kp14 method, we get the band structure of GaAs quantum well. Then, the anomalous current of charge carriers can be obtained by solving semiconductor Bloch equation with a terahertz laser.

Presenter: Ngô Thành Công