Program

P.22 -- Poster, NCTP-42

Date: Tuesday, 1 August 2017

Time: 16h00 - 17h30

Electronic properties of superlattice structures of AlN/GaN based on armchair nanoribbons

Huynh Thi My Duyen, Lai Thi Hong Yen, Nguyen Thanh Tien

College of Natural Sciences, Can Tho University

AlN and GaN are the typical semiconductor materials. These materials were used in application for optoelectronic devices. Both AlN and GaN have crystal structure wurtzite-like and they have many similar physical properties. Therefore, these two materials are combined into superlattice, it promises to create a new material system with new physical properties. In this study, we investigate the electronic properties of the superlattice the dependent of AlN/GaN armchair nanoribbons by using the density functional theory (DFT) method. We have used the PBE functional for GGA and a plane-wave basis set with the projector augmented wave method as implemented in the Vienna ab initio simulation package (VASP). In results, it is shown that the electronic structures of some crystal structures exist the strong quantum confinement effect. Electronic properties depended on the length of segments in terms of the number of the unitcells of constituent nanoribbons ($s_{1}, s_{2}$) and the width in term of the number of dimer lines in the primitive unit cell of constituent nanoribbons ($n_{1}, n_{2}$). In AlN/GaN structures, the best strong quantum confinement effect is (9-1, 9-2) structure.

Presenter: Huynh Thi My Duyen