Program

P.76 -- Poster, NCTP-41

Date: Wednesday, 3 August 2016

Time: 08h30 - 10h00

Metal-insulator transitions in silicene with spin orbit-interaction

Nguyen Thi Huong (1), Nguyen Thi Thao (2), Le Duc Anh (2), Tran Thi Thanh Mai (2), Hoang Anh Tuan (3), Tran Minh Tien (3)

(1) Thuy Loi University, 175 Tay Son, Dong Da, Ha Noi, Viet Nam (2) Hanoi National University of Education, 136 Xuan Thuy, Cau Giay, Hanoi, Vietnam (3) Institute of Physics, PO Box 429, Bo Ho, Hanoi 10000, Vietnam

We study a two-dimensional ionic Hubbard model with spin orbit interaction on a honeycomb lattice as a simple basis for describing the electronic structure of silicene in the presence of an electric field induced by the substrate. The local lattice Green function of the model is obtained within the coherent potential approximation. The influence of the spin orbit interaction on the Mott transition is investigated by the density of states at the fermi level and the energy gap. The critical values of correlation-driven metal–insulator transitions are estimated. Our results are closely relevant to current experimental and theoretical researches in silicence.

Presenter: Nguyen Thi Huong