Program

P.46 -- Poster, NCTP-41

Date: Wednesday, 3 August 2016

Time: 08h30 - 10h00

Uphill diffusion of vacancy in boron diffusion process in silicon

Vu Ba Dung

Hanoi University of Mining and Geology, Vietnam

Uphill diffusion is an interesting phenomenon, in which diffusion flux goes to higher concentration area (goes uphill). Uphill diffusion had been found and studied since 1949. A number of different approaches have been proposed for treatment of uphill diffusion. Most of researching about uphill diffusion showed that: uphill diffusion occurs in muticomponent systems and diffusion flux of a component is strongly coupled to its partner species that is cause of uphill diffusion. In this paper, uphill diffusion of vacancy in simultaneous diffusion of boron and point defect in silicon is presented and discussed. Results showed that: Vacancy can diffuse uphill in simultaneous diffusion in silicon; cause of uphill diffusion can be the coupled effect of vacancy diffusion fluxes with boron flux and/or direct interaction between boron molecules and vacancies.

Presenter: Vu Ba Dung