Program

P.3 -- Poster, NCTP-41

Date: Tuesday, 2 August 2016

Time: 08h30 - 10h00

Metal-insulator phase diagram for the fully diagonal disordered Hubbard model at half-filling

Hoang Anh Tuan (1) and Nguyen Thi Hai Yen (1)

Institute of Physics, VAST

The electronic properties of strongly correlated systems with binary type of disorder are investigated using the coherent potential approximation. For half-filled systems, two transitions from a band insulator via a metallic state to a Mott insulator are found with increasing the local Coulomb repulsion of only one of the constituents. Our phase diagram is compared with those obtained by the dynamical mean field theory.

Presenter: Hoang Anh-Tuan