Program

P.21 -- Poster, NCTP-41

Date: Tuesday, 2 August 2016

Time: 08h30 - 10h00

Magneto-thermoelectric effects in doped semiconductor superlattice in the presence of Laser radiation

Nguyen Quang Bau (1) , Dao Thu Hang (1,2) and Tran Quang Phuong (1,2)

(1) Faculty of Physics, Hanoi University of Sciences, Vietnam National University, Nguyen Trai Str., Thanh Xuan Dist., Hanoi, Vietnam (2) The People’s Police University of Technology and Logistics, Ho Town, Thuan Thanh Dist, Bac Ninh, Vietnam

The magneto-thermoelectric effects in doped semiconductor superlattice ( DSSL) in the presence of Laser radiation (LR) are studied with a periodical superlattice potential in the z-direction, subjected to a crossed electric field , magnetic field and LR characterized by electric field (where and are the amplitude and the frequency of the LR, respectively). The analytic expression for Ettingshausen coefficient (EC) is calculated by using the quantum kinetic equation for electrons. The dependence of EC on the frequency, the amplitude of LR, the DSSL parameters and temperature gradient is obtained. The results are numerically calculated, plotted, and discussed for GaAs:Si/GaAs:Be DSSL to clearly show the dependence of EC in DSSL on the above values and parameters. Comparing with the results obtained in case of the bulk semiconductors, we see the differences because of the different structure, wave function and energy spectrum of DSSL. Keywords: Ettingshausen, Doped semiconductor superlatitice, Laser radiation, GaAs:Si/GaAs:Be

Presenter: Nguyen Quang Bau