Programme

P.3 -- Poster

Date: Friday, 24 November 2017

Time: 10:30 - 11:20

Femtosecond pulsed laser deposition (fs-PLD) of zinc sulfide (ZnS) on silicon (100) and glass substrates

Miranda Jessa Jayne C. (1), De Mesa Joseph A. (1), Garcia Wilson O. (1)

National Institute of Physics, University of the Philippines Diliman

Zinc sulfide (ZnS) is suitable for applications in optoelectronic devices because of its properties like wide bandgap, high refractive index and low absorption in the visible and infrared region [1,2] . One technique used to deposit ZnS is pulsed laser deposition (PLD). This technique has been popular because of its inherent advantages like stoichiometric transfer of material. It has been shown that using a femtosecond laser as an excitation source for PLD (fs-PLD) minimizes unwanted droplets in the deposited films [3]. The potential applications of ZnS thin films and the advantages of fs-PLD as a deposition technique, makes it beneficial to understand the effects of deposition and post-deposition parameters to the samples. Our research aims to investigate the effects of in-situ and post deposition substrate heating to the morphology and crystal structure of the deposited ZnS on silicon (100) and glass substrates. Depositions were done for 4 hours inside a vacuum chamber maintained at base pressures of 10-5 mbar and 10-3 mbar using a mode-locked Ti:sapphire laser operating at a wavelength centered at 800 nm, pulse repetition rate of 80 MHz and pulse duration of around 100 fs. Substrate heating temperatures of 300ºC and 500ºC were used. X-ray diffraction (XRD) was used to determine the crystal structure of the samples while scanning electron microscopy (SEM) was used to determine the surface morphologies.

Presenter: Miranda Cosare Jessa Jayne