(Hanoi, December 23rd -25th, 2003)

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Following the school in 2002,  INSTITUTE OF PHYSICS will organize a school on Simulation and Modeling Physics from 23rd to 25th, December, 2003 on the subject:

"SIMULATION OF ELECTRON TRANSPORT IN SEMICONDUCTOR NANODEVICES"

LECTURERS :

1 - Philippe Dolfus,
     Institute of Fundamental Electronics, Univ. Paris-Sud 11, Orsay (France).

2 - Nguyen Van Lien,
     Institute of Physics, NCST, Hanoi (Vietnam).

CONTENTS OF LECTURES:

1. From classical to quantum transport in nanodevices:

    - Brief introduction on semiconductor nanodevices
    -
    Classical transport: distribution function and Boltzmann Transport Equation (BTE)
    - Scattering mechanisms: phonon and impurity scattering
    - Application of BTE to nanodevice simulation: example of Monte Carlo simulation
    - Limitations of BTE (quantum effects)
    - Introduction to quantum transport: Wigner function and transport equation
    - Relations and differences between Boltzmann (classical) and Wigner (quantum)   formalisms
    - Green Function Method

2. Single electron tunneling and coulomb blockade in quantum dot devices:

Lecture Notes and Programs:

PLACE & TIMETABLE:

    - Conference Hall of Institute of Physics, 46 Nguyen Van Ngoc, Thu le, Ba dinh, Hanoi.

     

    - From Tuesday  23rd December, 2003 to Thursday 25th December, 2003.

    - 8h 30 am to 11h 30 am  : Theoretical lectures (unlimited number of participants).

    - 13h 00 pm to 16h 30 pm: Practice on computer (limited number of participants).

REGISTRATION:

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CONTACT ADDRESS:

Ms. Nguyen Kim Thanh
Institute of Physics, 46 Nguyen Van Ngoc, Thule, Badinh, Hanoi
Email: smp@iop.vast.ac.vn ; Tel: 4 766 2107 ; Fax: 4 766 2163
Website: http://www.iop.vast.ac.vn/activites/smp